PART |
Description |
Maker |
NTE226 |
Germanium PNP Transistor Audio Power Amp
|
NTE[NTE Electronics]
|
NTE126 |
Germanium Mesa Transistor, PNP, for High-Speed Switching Applications
|
NTE[NTE Electronics]
|
2N526 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency range
|
New Jersey Semi-Conductor Products, Inc.
|
2N539 2N540 2N538 2N540A 2N539A |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTOR PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
|
OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 500mA的一(c)|
|
APEM SA
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2 |
TRANSISTOR | BJT | PNP | 11V V(BR)CEO | 50MA I(C) | TO-24 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-12 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-22 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-9 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50A I(C) | TO-36 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 7.5A I(C) | TO-82 TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 7.5A I(C) | TO-82 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-3 TRANSISTOR | BJT | PNP | 110V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 25MA I(C) | TO-22VAR TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 晶体管|晶体管|进步党| 50V五(巴西)总裁| 7A条一(c)| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 12V的五(巴西)总裁| 100mA的一(c)| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 65V的五(巴西)总裁|5A一(c)|6 TRANSISTOR | BJT | PNP | 15A I(C) | TO-36 TRANSISTOR | BJT | PNP | 38V V(BR)CEO | 15A I(C) | TO-41
|
NXP Semiconductors N.V. Microsemi, Corp.
|
2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Silicon transistor
|
IRC Advanced Film NEC[NEC]
|
1N55 1N64 1N73 1N107 1N273 1N277 1N279 1N281 1N289 |
1N55 1N64 1N73 1N3082 1N3865 1W569 1W634 AA112 AA113 AA117 AA118 AA119 DR213 HG5007 HG50089 T7G T17G T19G GERMANIUM DOIDES GERMANIUM DOIDES GERMANIUM DIODES
|
American Microsemiconductor Inc. American Microsemicondu... American Accurate Compo...
|
2N1038 2N1039 2N1040 2N1041 2N2554 2N2556 2N2552 2 |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER
|
Unknow
|
AP1043 AP1044 AP1141 AP1057 AP1103 AP1137 |
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-111 Power inductor, 10/20% tol, SMT, RoHS TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 5A条一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-5
|
Electronic Theatre Controls, Inc.
|